polysilicon-gate charge-coupled device
- polysilicon-gate charge-coupled device
- krūvio sąsajos įtaisas su polikristalinio silicio užtūra
statusas T sritis radioelektronika
atitikmenys: angl. polysilicon-gate charge-coupled device
vok. ladungsgekoppeltes Poly-Si-Gate-Bauelement, n
rus. прибор с зарядовой связью с поликристаллическим кремниевым затвором, m
pranc. dispositif à couplage de charge à grilles en polysilicium, m
Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“.
Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas.
2000.
Look at other dictionaries:
Charge-coupled device — A specially developed CCD used for ultraviolet imaging in a wire bonded package. A charge coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for… … Wikipedia
dispositif à couplage de charge à grilles en polysilicium — krūvio sąsajos įtaisas su polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. polysilicon gate charge coupled device vok. ladungsgekoppeltes Poly Si Gate Bauelement, n rus. прибор с зарядовой связью с… … Radioelektronikos terminų žodynas
ladungsgekoppeltes Poly-Si-Gate-Bauelement — krūvio sąsajos įtaisas su polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. polysilicon gate charge coupled device vok. ladungsgekoppeltes Poly Si Gate Bauelement, n rus. прибор с зарядовой связью с… … Radioelektronikos terminų žodynas
Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most … Wikipedia
krūvio sąsajos įtaisas su polikristalinio silicio užtūra — statusas T sritis radioelektronika atitikmenys: angl. polysilicon gate charge coupled device vok. ladungsgekoppeltes Poly Si Gate Bauelement, n rus. прибор с зарядовой связью с поликристаллическим кремниевым затвором, m pranc. dispositif à… … Radioelektronikos terminų žodynas
прибор с зарядовой связью с поликристаллическим кремниевым затвором — krūvio sąsajos įtaisas su polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. polysilicon gate charge coupled device vok. ladungsgekoppeltes Poly Si Gate Bauelement, n rus. прибор с зарядовой связью с… … Radioelektronikos terminų žodynas
Michael Francis Tompsett — is a British born physicist and former researcher at English Electric Valve Company, [1] who later moved to Bell Labs in America. He is best known as the inventor of Charge Coupled Device (CCD) Imagers used for imaging in devices such as digital… … Wikipedia
CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) ( … Wikipedia
